?2002 fairchild semiconductor corporation hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3 rev. b hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3 14a, 600v, ufs series n-channel igbts the hgtd7n60b3s, HGT1S7N60B3S and hgtp7n60b3 are mos gated high voltage switching d evices combining the best features of mosfets and bipolar transistors. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49190. symbol features ? 14a, 600v, t c = 25 o c 600v switching soa capability typical fall time. . . . . . . . . . . . . . . . 120ns at t j = 150 o c short circuit rating low conduction loss packaging jedec to-220ab jedec to-263ab jedec to-252aa ordering information part number package brand hgtd7n60b3s to-252aa g7n60b HGT1S7N60B3S to-263ab g7n60b3 hgtp7n60b3 to-220ab g7n60b3 note: when ordering, use the entire part number. add the suffix 9a to obtain the to-252aa and to-263ab variant in tape and reel, e.g., hgtd7n60b3s9a. c e g c e g collector (flange) g collector (flange) e g collector (flange) e fairchild corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet january 2002
?2002 fairchild semiconductor corporation hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3 rev. b absolute maximum ratings t c = 25 o c, unless otherwise specified all types units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 14 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 7a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 56 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c, figure 2 . . . . . . . . . . . . . . . . . . . . . . . . ssoa 35a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 60 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 w/ o c reverse voltage avalanche energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e arv 100 mj operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 260 o c short circuit withstand time (note 2) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 2 s short circuit withstand time (note 2) at v ge = 10v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 12 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. single pulse; pulse width limited by maximum junction temperature. parts may current limit at less than i cm . 2. v ce = 360v, t j = 125 o c, r g = 50 ? . electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v emitter to collector breakdown voltage bv ecs i c = 3ma, v ge = 0v 15 28 - v collector to emitter leakage current i ces v ce = bv ces t c = 25 o c - - 100 a t c = 150 o c--2.0ma collector to emitter saturation voltage v ce(sat) i c = i c110 , v ge = 15v t c = 25 o c-1.82.1v t c = 150 o c-2.12.4v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge 3.0 5.1 6.0 v gate to emitter leakage current i ges v ge = 20v - - 100 na switching soa ssoa t j = 150 o c r g = 50 ? v ge = 15v l = 100 h v ce = 480v 42 - - a v ce = 600v 35 - - a gate to emitter plateau voltage v gep i c = i c110 , v ce = 0.5 bv ces -7.7- v on-state gate charge q g(on) i c = i c110 , v ce = 0. 5bv ces v ge = 15v - 23 28 nc v ge = 20v - 30 37 nc current turn-on delay time t d(on)i igbt and diode both at t j = 25 o c i ce = i c110 , v ce = 0.8 bv ces , v ge = 15v, r g = 50 ? , l = 2mh test circuit (figure 17) -26-ns current rise time t ri -21-ns current turn-off delay time t d(off)i - 130 160 ns current fall time t fi -6080ns turn-on energy (note 4) e on1 -72- j turn-on energy (note 4) e on2 - 160 200 j turn-off energy (note 3) e off - 120 200 j hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3
?2002 fairchild semiconductor corporation hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3 rev. b current turn-on delay time t d(on)i igbt and diode both at t j = 150 o c i ce = i c110 , v ce = 0.8 bv ces , v ge = 15v, r g =50 ?, l = 2mh test circuit (figure 17) -24-ns current rise time t ri -22-ns current turn-off delay time t d(off)i - 230 295 ns current fall time t fi - 120 175 ns turn-on energy (note 4) e on1 -80- j turn-on energy (note 4) e on2 - 310 350 j turn-off energy (note 3) e off - 350 500 j thermal resistance junction to case r jc --2.1 o c/w note: 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per je dec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method p roduces the true total turn-off ener gy loss. turn-on losses incl ude losses due to diode recovery. 4. values for two turn-on loss conditions are s hown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 17. electrical specifications t c = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area t c , case temperature ( o c) i ce , dc collector current (a) 25 50 75 100 125 15 0 4 0 8 16 12 6 2 10 14 v ge = 15v v ce , collector to emitter voltage (v) 600 30 i ce , collector to emitter current (a) 10 20 200 300 100 0 400 500 50 0 40 70 0 t j = 150 o c, r g = 5 0? , v ge = 15v hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3
?2002 fairchild semiconductor corporation hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3 rev. b figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time figure 5. collector to emitter on state voltage figure 6. collector to emitter on state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current typical performance curves unless otherwise specified (continued) f max , operating frequency (khz) 1 i ce , collector to emitter current (v) 10 510 1 100 1 5 468 3 2 400 t j = 150 o c, r g = 50 ? , l = 2mh, v ce = 480v t c v ge 110 o c10v 110 o c15v 10v 75 o c 15v 75 o c f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 2.1 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 10 11 12 13 14 15 20 40 60 80 100 2 6 10 14 18 v ce = 360v, r g = 50 ? , t j = 125 o c i sc t sc 0246 8 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 10 20 30 1357 5 15 25 duty cycle < 0.5%, v ge = 10v t c = 150 o c t c = -55 o c t c = 25 o c pulse duration = 250 s 0468 2357 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 10 20 40 30 1 t c = 150 o c t c = 25 o c t c = -55 o c duty cycle < 0.5%, v ge = 15v pulse duration = 250 s e on 2 , turn-on energy loss ( j) 1200 i ce , collector to emitter current (a) 15 1600 800 400 0 9 5 1 371113 t j = 25 o c, v ge = 10v t j = 25 o c, v ge = 15v t j = 150 o c, v ge = 15v t j = 150 o c, v ge = 10v r g = 50 ? , l = 2mh, v ce = 480v i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 1 5 800 0 11 9 5 1 200 600 1000 37 13 400 t j = 150 o c, v ge = 10v and 15v r g = 50 ? , l = 2mh, v ce = 480v t j = 25 o c, v ge = 10v and 15v hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3
?2002 fairchild semiconductor corporation hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3 rev. b figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms typical performance curves unless otherwise specified (continued) i ce , collector to emitter current (a) t di , turn-on delay time (ns) 10 5 19111 5 20 30 40 50 60 37 13 t j = 150 o c, v ge = 10v t j = 25 o c, v ge = 10v t j = 25 o c, v ge = 15v t j = 150 o c, v ge = 15v r g = 50 ? , l = 2mh, v ce = 480v i ce , collector to emitter current (a) t ri , rise time (ns) 1 20 60 40 80 100 0 5 9 13 15 3711 120 140 t j = 150 o c, v ge = 10v t j = 25 o c, v ge = 10v r g = 50 ? , l = 2mh, v ce = 480v t j = 25 o c and 150 o c, v ge = 15v i ce , collector to emitter current (a) 1 t d(off)i , turn-off delay time (ns) 59131 5 100 150 200 250 50 3711 r g = 50 ? , l = 2mh, v ce = 480v t j = 150 o c, v ge = 15v t j = 150 o c, v ge = 10v t j = 25 o c, v ge = 15v t j = 25 o c, v ge = 10v i ce , collector to emitter current (a) t fi , fall time (ns) 159131 5 80 120 100 3711 40 60 r g = 50 ? , l = 2mh, v ce = 480v t j = 150 o c, v ge = 10v and 15v t j = 25 o c, v ge = 10v and 15v i ce , collector to emitter current (a) 0 16 24 32 81 4 612 v ge , gate to emitter voltage (v) 8 40 10 t c = 25 o c t c = 150 o c t c = -55 o c pulse duration = 250 s v ce = 10v duty cycle = < 0.5% q g , gate charge (nc) 20 0 12 15 9 6 3 012 816 2 8 v ge , gate to emitter voltage (v) 24 4 i g(ref) = 0.758ma, r l = 86 ?, t c = 25 o c v ce = 600v v ce = 400v v ce = 200v hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3
?2002 fairchild semiconductor corporation hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3 rev. b figure 15. capacitance vs collector to emitter voltage figure 16. normalized transient thermal response, junction to case typical performance curves unless otherwise specified (continued) v ce , collector to emitter voltage (v) 0 5 10 15 20 25 0 200 c, capacitance (pf) 400 600 800 1000 1200 frequency = 1mhz c ies c oes c res t 1 , rectangular pulse duration (s) 10 -5 10 -3 10 0 10 1 10 -4 10 -1 10 -2 10 0 z jc , normalized thermal response 10 -1 10 -2 t 1 t 2 p d single pulse duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 test circuit and waveforms figure 17. inductive switching test circui t figure 18. switching test waveforms r g = 50 ? l = 2mh v dd = 480v + - rhrd660 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3
?2002 fairchild semiconductor corporation hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3 rev. b handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static c harge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precauti ons are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?eccosorbd? ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open-circuited or floating should be avoided. these conditions can result in turn-on of the d evice due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 18. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d = (t jm - t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 18. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce x v ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgtd7n60b3s, HGT1S7N60B3S, hgtp7n60b3
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